MMN600DB015B MOSFET Datasheet: N-Ch, 150V, 850A. Full specification with pinout and replacement list

MMN600DB015B Specs and Replacement

Type Designator: MMN600DB015B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 850 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 350 nS

Cossⓘ - Output Capacitance: 4700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: MODULE

MMN600DB015B substitution

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MMN600DB015B datasheet

..1. Size:312K macmic
mmn600db015b.pdf pdf_icon

MMN600DB015B 150V 600A N-ch Power MOSFET Module April 2015 Version 0 RoHS Compliant PRODUCT FEATURES RDS(ON).typ=1.8m @VGS=10V 175 junction temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside APPLICATIONS High efficiency DC/DC Converters ISG EV Products UPS inverter VDS ID RDS(ON)... See More ⇒

4.1. Size:433K macmic
mmn600db012b.pdf pdf_icon

8879 ;... See More ⇒

9.1. Size:146K m-mos
mmn60nf06.pdf pdf_icon

MMN60NF06 Data Sheet M-MOS Semiconductor Sdn. Bhd. 60V N-Channel Enhancement-Mode MOSFET VDS= 60V RDS(ON), Vgs@10V, Ids@30A = 16m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current TO-220 Internal Schematic Diagram Drain Gate Source Top V... See More ⇒

Detailed specifications: XP202A0003PR-G, YTF830, 2SK1029, 2SK1197, 2SK1297, MMN400A006U1, MMN400A010U1, MMN600DB012B, IRFZ24N, MMN668A010U1, FTP03N06NA, ITP09N50A, HX2301, HX2301A, HX2302, HX2302A, HX2305