PSMN040-200W MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN040-200W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 183 nC
Rise Time (tr): 94 nS
Drain-Source Capacitance (Cd): 732 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO-247
PSMN040-200W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN040-200W Datasheet (PDF)
1.1. psmn040-200w.pdf 
Size:87K _update_mosfet
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 50 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil
1.2. psmn040-200w.pdf Size:87K _philips2
Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) ? 40 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology
2.1. psmn040-100mse.pdf Size:347K _update_mosfet
PSMN040-100MSE N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci
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