All MOSFET. SVF12N65CS Datasheet

 

SVF12N65CS Datasheet and Replacement


   Type Designator: SVF12N65CS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46.4 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263
 

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SVF12N65CS Datasheet (PDF)

 ..1. Size:489K  silan
 svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf pdf_icon

SVF12N65CS

SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A

 6.1. Size:586K  1
 svf12n65f svf12n65t.pdf pdf_icon

SVF12N65CS

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 6.2. Size:394K  silan
 svf12n65f svf12n65k svf12n65s svf12n65str.pdf pdf_icon

SVF12N65CS

SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3

 6.3. Size:444K  silan
 svf12n65t svf12n65f.pdf pdf_icon

SVF12N65CS

SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3

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Datasheet: SVF10N80F , SVF10N80K , SVF12N60T , SVF12N60F , SVF12N60S , SVF12N60K , SVF12N65CF , SVF12N65CK , P55NF06 , SVF12N65CKL , SVF12N65CFQ , SVF13N50T , SVF13N50F , SVF13N50PN , SVF14N65CFJ , SVF18N50F , SVF18N50T .

Keywords - SVF12N65CS MOSFET datasheet

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