SVF1N60AB MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF1N60AB
Marking Code: 1N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.37 nC
trⓘ - Rise Time: 11.9 nS
Cossⓘ - Output Capacitance: 23.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.1 Ohm
Package: TO92
SVF1N60AB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF1N60AB Datasheet (PDF)
svf1n60am svf1n60amj svf1n60ab svf1n60ad svf1n60af svf1n60ah.pdf
SVF1N60AM/MJ/B/D/F/H 1A600V N 2123SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 11323
svf1n60m svf1n60mj svf1n60n svf1n60b svf1n60d.pdf
SVF1N60M/MJ/N/B/D 1A600V N 21SVF1N60M/MJ/N/B/D N MOS 3TO-252-2L F-CellTM VDMOS 1132
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD