SVF1N60N Specs and Replacement
Type Designator: SVF1N60N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.27 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO126
SVF1N60N substitution
- MOSFET ⓘ Cross-Reference Search
SVF1N60N datasheet
svf1n60am svf1n60amj svf1n60ab svf1n60ad svf1n60af svf1n60ah.pdf
SVF1N60AM/MJ/B/D/F/H 1A 600V N 2 1 2 3 SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 1 1 3 2 3 ... See More ⇒
Detailed specifications: SVF1N60AM, SVF1N60AMJ, SVF1N60AB, SVF1N60AD, SVF1N60AF, SVF1N60AH, SVF1N60M, SVF1N60MJ, K4145, SVF1N60B, SVF1N60D, SVF20N60F, SVF20N60PN, SVF23N50PN, SVF2N60CN, SVF2N60CNF, SVF2N60CM
Keywords - SVF1N60N MOSFET specs
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