All MOSFET. SVF1N60N Datasheet

 

SVF1N60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVF1N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.45 nC
   trⓘ - Rise Time: 13.27 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
   Package: TO126

 SVF1N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVF1N60N Datasheet (PDF)

 ..1. Size:606K  silan
 svf1n60m svf1n60mj svf1n60n svf1n60b svf1n60d.pdf

SVF1N60N SVF1N60N

SVF1N60M/MJ/N/B/D 1A600V N 21SVF1N60M/MJ/N/B/D N MOS 3TO-252-2L F-CellTM VDMOS 1132

 7.1. Size:522K  silan
 svf1n60am svf1n60amj svf1n60ab svf1n60ad svf1n60af svf1n60ah.pdf

SVF1N60N SVF1N60N

SVF1N60AM/MJ/B/D/F/H 1A600V N 2123SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 11323

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top