SVF1N60B MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF1N60B
Marking Code: F1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.45 nC
trⓘ - Rise Time: 13.27 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO92
SVF1N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF1N60B Datasheet (PDF)
..1. Size:606K silan
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SVF1N60M/MJ/N/B/D 1A600V N 21SVF1N60M/MJ/N/B/D N MOS 3TO-252-2L F-CellTM VDMOS 1132
7.1. Size:522K silan
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SVF1N60AM/MJ/B/D/F/H 1A600V N 2123SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 11323
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .