All MOSFET. SVF2N60RMJ Datasheet

 

SVF2N60RMJ Datasheet and Replacement


   Type Designator: SVF2N60RMJ
   Marking Code: 2N60RMJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.92 nC
   trⓘ - Rise Time: 22.7 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO251J
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SVF2N60RMJ Datasheet (PDF)

 ..1. Size:614K  silan
 svf2n60rd svf2n60rm svf2n60rmj.pdf pdf_icon

SVF2N60RMJ

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133

 ..2. Size:401K  silan
 svf2n60rdtr svf2n60rm svf2n60rmj.pdf pdf_icon

SVF2N60RMJ

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3

 7.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N60RMJ

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 7.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N60RMJ

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

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History: GSM1304E

Keywords - SVF2N60RMJ MOSFET datasheet

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