All MOSFET. SVF2N65MJ Datasheet

 

SVF2N65MJ Datasheet and Replacement


   Type Designator: SVF2N65MJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.83 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 34.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO251J
 

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SVF2N65MJ Datasheet (PDF)

 ..1. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf pdf_icon

SVF2N65MJ

SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

 7.1. Size:542K  silan
 svf2n65f.pdf pdf_icon

SVF2N65MJ

SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 8.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N65MJ

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 8.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N65MJ

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

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History: AP2304GN | MCH3479

Keywords - SVF2N65MJ MOSFET datasheet

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