SVF2N65MJ Specs and Replacement

Type Designator: SVF2N65MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 34.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO251J

SVF2N65MJ substitution

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SVF2N65MJ datasheet

 ..1. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf pdf_icon

SVF2N65MJ

SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS ... See More ⇒

 7.1. Size:542K  silan
 svf2n65f.pdf pdf_icon

SVF2N65MJ

SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒

 8.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N65MJ

SVF2N60M(MJ)(NF)(F)(D) 2A 600V N 2 SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 1 2 3 3 TO-126F-3L ... See More ⇒

 8.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N65MJ

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Detailed specifications: SVF2N60CD, SVF2N60MJ, SVF2N60N, SVF2N60NF, SVF2N60RD, SVF2N60RM, SVF2N60RMJ, SVF2N65N, IRF1407, SVF2N65D, SVF2N70M, SVF2N70MJ, SVF2N70F, SVF2N70D, SVF2N70NF, TSM1N45CW, TSM1N45DCS

Keywords - SVF2N65MJ MOSFET specs

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