SVF2N70NF MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF2N70NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.96 nC
trⓘ - Rise Time: 22.27 nS
Cossⓘ - Output Capacitance: 32.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO126F
SVF2N70NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF2N70NF Datasheet (PDF)
svf2n70m svf2n70mj svf2n70f svf2n70d svf2n70nf svf2n70mn.pdf
SVF2N70M/MJ/F/D/NF/MN 10A650V N 2SVF2N70M/MJ/ F/D/NF/MN N MOS 123 F-CellTM VDMOS TO-251-3L1132
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf
SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L
svf2n60nf svf2n60f.pdf
SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3
svf2n60rd svf2n60rm svf2n60rmj.pdf
SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133
svf2n60m-f-t-d.pdf
SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s
svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS
svf2n60cn svf2n60cm svf2n60cf.pdf
SVF2N60CN/M/F 2A600V N 2SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 31. 2. 3
svf2n60cn svf2n60cnf svf2n60cm svf2n60cmj svf2n60cf svf2n60cd.pdf
SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra
svf2n60rdtr svf2n60rm svf2n60rmj.pdf
SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3
svf2n65f svf2n65n svf2n65mj svf2n65d.pdf
SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS
svf2n65f.pdf
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf2n60m svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2N65KG-TA3-T | 7410 | 2SK3683-01MR | IRF6633 | IRFY9140CM | SVF18N65T | 2N65K
History: 2N65KG-TA3-T | 7410 | 2SK3683-01MR | IRF6633 | IRFY9140CM | SVF18N65T | 2N65K
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