All MOSFET. TSM20N50CI Datasheet

 

TSM20N50CI Datasheet and Replacement


   Type Designator: TSM20N50CI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: ITO-220
 

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TSM20N50CI Datasheet (PDF)

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TSM20N50CI

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

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Keywords - TSM20N50CI MOSFET datasheet

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