TSM20N50CZ Specs and Replacement

Type Designator: TSM20N50CZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 296 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220

TSM20N50CZ substitution

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TSM20N50CZ datasheet

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TSM20N50CZ

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov... See More ⇒

Detailed specifications: TSM1N60SCT, TSM1N80CW, TSM1N80SCT, TSM1NB60CH, TSM1NB60CP, TSM1NB60CW, TSM1NB60SCT, TSM20N50CI, IRF1405, TSM210N06CZ, TSM2301ACX, TSM2301BCX, TSM2301CX, TSM2302CX, TSM2303CX, TSM2305CX, TSM2306CX

Keywords - TSM20N50CZ MOSFET specs

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