All MOSFET. TSM20N50CZ Datasheet

 

TSM20N50CZ Datasheet and Replacement


   Type Designator: TSM20N50CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220
 

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TSM20N50CZ Datasheet (PDF)

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TSM20N50CZ

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

Datasheet: TSM1N60SCT , TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT , TSM20N50CI , NCEP15T14 , TSM210N06CZ , TSM2301ACX , TSM2301BCX , TSM2301CX , TSM2302CX , TSM2303CX , TSM2305CX , TSM2306CX .

History: BUK664R4-55C | VBZE30N02

Keywords - TSM20N50CZ MOSFET datasheet

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