All MOSFET. TSM2301BCX Datasheet

 

TSM2301BCX Datasheet and Replacement


   Type Designator: TSM2301BCX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23
 

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TSM2301BCX Datasheet (PDF)

 ..1. Size:119K  taiwansemi
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TSM2301BCX

 7.1. Size:249K  taiwansemi
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TSM2301BCX

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

 7.2. Size:340K  taiwansemi
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TSM2301BCX

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

 7.3. Size:118K  taiwansemi
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TSM2301BCX

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Datasheet: TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT , TSM20N50CI , TSM20N50CZ , TSM210N06CZ , TSM2301ACX , IRFZ46N , TSM2301CX , TSM2302CX , TSM2303CX , TSM2305CX , TSM2306CX , TSM2307CX , TSM2308CX , TSM2310CX .

Keywords - TSM2301BCX MOSFET datasheet

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