TSM2301CX Specs and Replacement

Type Designator: TSM2301CX

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 127 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

TSM2301CX substitution

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TSM2301CX datasheet

 ..1. Size:340K  taiwansemi
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TSM2301CX

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi... See More ⇒

 7.1. Size:119K  taiwansemi
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TSM2301CX

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 7.2. Size:249K  taiwansemi
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TSM2301CX

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On- resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23 ... See More ⇒

 7.3. Size:118K  taiwansemi
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TSM2301CX

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Detailed specifications: TSM1NB60CP, TSM1NB60CW, TSM1NB60SCT, TSM20N50CI, TSM20N50CZ, TSM210N06CZ, TSM2301ACX, TSM2301BCX, IRF830, TSM2302CX, TSM2303CX, TSM2305CX, TSM2306CX, TSM2307CX, TSM2308CX, TSM2310CX, TSM2311CX

Keywords - TSM2301CX MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs