TSM2318CX
MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM2318CX
Marking Code: 18*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
SOT-23
TSM2318CX
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM2318CX
Datasheet (PDF)
..1. Size:237K taiwansemi
tsm2318cx.pdf 
TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa
8.2. Size:208K taiwansemi
tsm2311cx.pdf
TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi
8.3. Size:195K taiwansemi
tsm2314cx.pdf
TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin
8.4. Size:239K taiwansemi
tsm2310cx.pdf
TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info
8.5. Size:213K taiwansemi
tsm2312cx.pdf
TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In
8.8. Size:912K cn vbsemi
tsm2314cx.pdf
TSM2314CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
8.9. Size:911K cn vbsemi
tsm2312cx.pdf
TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
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