TSM2318CX - Даташиты. Аналоги. Основные параметры

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa

TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM2314CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC