MTP3N50E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP3N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
Cossⓘ - Output Capacitance: 435 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220
MTP3N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP3N50E Datasheet (PDF)
mtp3n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
mtp3n50e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MTP3N50EFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS
mtp3n50erev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
mtp3n55.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP3N55 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3
Datasheet: MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , 2N60 , MTP3N60 , MTP3N60FI , MTP6N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918