MTP3N50E - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP3N50E FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Popular AC-DC applications Power supply Switching applications ABS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP3N55 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3