TSM3457CX6 Specs and Replacement
Type Designator: TSM3457CX6
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.33 nS
Cossⓘ -
Output Capacitance: 90.96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-26
- MOSFET ⓘ Cross-Reference Search
TSM3457CX6 datasheet
..1. Size:244K taiwansemi
tsm3457cx6.pdf 
TSM3457 30V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 60 @ VGS = 10V -5 3. Gate 4. Source -30 100 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde... See More ⇒
9.1. Size:203K taiwansemi
tsm3424cx6.pdf
TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin... See More ⇒
9.3. Size:242K taiwansemi
tsm3400cx.pdf
TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor... See More ⇒
9.4. Size:340K taiwansemi
tsm3441cx6.pdf
TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch ... See More ⇒
9.5. Size:201K taiwansemi
tsm3446cx6.pdf
TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m ) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde... See More ⇒
9.6. Size:343K taiwansemi
tsm3442cx6.pdf
TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi... See More ⇒
9.7. Size:208K taiwansemi
tsm3443cx6.pdf
TSM3443 20V P-Channel MOSFET Pin Definition SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m ) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch ... See More ⇒
9.8. Size:393K taiwansemi
tsm3462cx6.pdf
TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 33 @ VGS = 4.5V 5.0 2. Drain 5, Drain 3. Gate 4. Source 20 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch ... See More ⇒
9.10. Size:235K taiwansemi
tsm3401cx.pdf
TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info... See More ⇒
9.11. Size:338K taiwansemi
tsm3404cx.pdf
TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac... See More ⇒
Detailed specifications: TSM3424CX6, TSM3433CX6, TSM3441CX6, TSM3442CX6, TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6, 2SK3878, TSM3460CX6, TSM3462CX6, TSM3481CX6, TSM3548DCX6, TSM35N03CP, TSM35N03PQ56, TSM35N10CP, TSM3900DCX6
Keywords - TSM3457CX6 MOSFET specs
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