TSM3457CX6
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TSM3457CX6
Маркировка: 57*
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 9.52
nC
trⓘ -
Время нарастания: 2.33
ns
Cossⓘ - Выходная емкость: 90.96
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06
Ohm
Тип корпуса:
SOT-26
Аналог (замена) для TSM3457CX6
TSM3457CX6
Datasheet (PDF)
..1. Size:244K taiwansemi
tsm3457cx6.pdf 
TSM3457 30V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 60 @ VGS = 10V -5 3. Gate 4. Source -30 100 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde
9.1. Size:203K taiwansemi
tsm3424cx6.pdf 
TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin
9.3. Size:242K taiwansemi
tsm3400cx.pdf 
TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor
9.4. Size:340K taiwansemi
tsm3441cx6.pdf 
TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch
9.5. Size:201K taiwansemi
tsm3446cx6.pdf 
TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde
9.6. Size:343K taiwansemi
tsm3442cx6.pdf 
TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi
9.7. Size:208K taiwansemi
tsm3443cx6.pdf 
TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch
9.8. Size:393K taiwansemi
tsm3462cx6.pdf 
TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 33 @ VGS = 4.5V 5.0 2. Drain 5, Drain 3. Gate 4. Source 20 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch
9.10. Size:235K taiwansemi
tsm3401cx.pdf 
TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info
9.11. Size:338K taiwansemi
tsm3404cx.pdf 
TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac
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