TSM35N03CP MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM35N03CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-252
TSM35N03CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM35N03CP Datasheet (PDF)
tsm35n03cp.pdf
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TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @
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