Справочник MOSFET. TSM35N03CP

 

TSM35N03CP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TSM35N03CP
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для TSM35N03CP

   - подбор ⓘ MOSFET транзистора по параметрам

 

TSM35N03CP Datasheet (PDF)

 ..1. Size:339K  taiwansemi
tsm35n03cp.pdfpdf_icon

TSM35N03CP

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order

 6.1. Size:87K  taiwansemi
tsm35n03pq56.pdfpdf_icon

TSM35N03CP

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @

 8.1. Size:89K  taiwansemi
tsm35n10cp.pdfpdf_icon

TSM35N03CP

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package

 9.1. Size:64K  taiwansemi
tsm3548dcx6.pdfpdf_icon

TSM35N03CP

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition: MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa

Другие MOSFET... TSM3446CX6 , TSM3454CX6 , TSM3455CX6 , TSM3457CX6 , TSM3460CX6 , TSM3462CX6 , TSM3481CX6 , TSM3548DCX6 , 5N60 , TSM35N03PQ56 , TSM35N10CP , TSM3900DCX6 , TSM3911DCX6 , TSM3N80CH , TSM3N80CI , TSM3N80CP , TSM3N80CZ .

History: IRFH7188 | IPD082N10N3G | AM40P10-200P | AP3986I | CS10N65FA9HD | SHD225611 | AM40N10-28D

 

 
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