All MOSFET. TSM35N10CP Datasheet

 

TSM35N10CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM35N10CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO-252

 TSM35N10CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM35N10CP Datasheet (PDF)

 ..1. Size:89K  taiwansemi
 tsm35n10cp.pdf

TSM35N10CP TSM35N10CP

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package

 8.1. Size:339K  taiwansemi
 tsm35n03cp.pdf

TSM35N10CP TSM35N10CP

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order

 8.2. Size:87K  taiwansemi
 tsm35n03pq56.pdf

TSM35N10CP TSM35N10CP

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @

 9.1. Size:64K  taiwansemi
 tsm3548dcx6.pdf

TSM35N10CP TSM35N10CP

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition: MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top