Справочник MOSFET. TSM35N10CP

 

TSM35N10CP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TSM35N10CP
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 132 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для TSM35N10CP

   - подбор ⓘ MOSFET транзистора по параметрам

 

TSM35N10CP Datasheet (PDF)

 ..1. Size:89K  taiwansemi
tsm35n10cp.pdfpdf_icon

TSM35N10CP

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package

 8.1. Size:339K  taiwansemi
tsm35n03cp.pdfpdf_icon

TSM35N10CP

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order

 8.2. Size:87K  taiwansemi
tsm35n03pq56.pdfpdf_icon

TSM35N10CP

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @

 9.1. Size:64K  taiwansemi
tsm3548dcx6.pdfpdf_icon

TSM35N10CP

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition: MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa

Другие MOSFET... TSM3455CX6 , TSM3457CX6 , TSM3460CX6 , TSM3462CX6 , TSM3481CX6 , TSM3548DCX6 , TSM35N03CP , TSM35N03PQ56 , SPP20N60C3 , TSM3900DCX6 , TSM3911DCX6 , TSM3N80CH , TSM3N80CI , TSM3N80CP , TSM3N80CZ , TSM3N90CH , TSM3N90CI .

History: STFI11N65M2 | IPB80N04S4-04 | STP10NM60ND | DHB3205A | 30N20 | SM4025PSU | AP2328GN

 

 
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