TSM3900DCX6 Specs and Replacement

Type Designator: TSM3900DCX6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.56 nS

Cossⓘ - Output Capacitance: 80.56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT-26

TSM3900DCX6 substitution

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TSM3900DCX6 datasheet

 ..1. Size:328K  taiwansemi
 tsm3900dcx6.pdf pdf_icon

TSM3900DCX6

TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 VDS (V) RDS(on)(m ) ID (A) 3. Gate 2 4. Drain 2 55 @ VGS = 4.5V 2.0 20 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ... See More ⇒

 9.1. Size:299K  taiwansemi
 tsm3911dcx6.pdf pdf_icon

TSM3900DCX6

TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 VDS (V) RDS(on)(m ) ID (A) 3. Gate 2 4. Drain 2 140 @ VGS = -4.5V -2.2 -20 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica... See More ⇒

Detailed specifications: TSM3457CX6, TSM3460CX6, TSM3462CX6, TSM3481CX6, TSM3548DCX6, TSM35N03CP, TSM35N03PQ56, TSM35N10CP, IRFP260, TSM3911DCX6, TSM3N80CH, TSM3N80CI, TSM3N80CP, TSM3N80CZ, TSM3N90CH, TSM3N90CI, TSM3N90CP

Keywords - TSM3900DCX6 MOSFET specs

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