All MOSFET. TSM3900DCX6 Datasheet

 

TSM3900DCX6 Datasheet and Replacement


   Type Designator: TSM3900DCX6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.56 nS
   Cossⓘ - Output Capacitance: 80.56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-26
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TSM3900DCX6 Datasheet (PDF)

 ..1. Size:328K  taiwansemi
 tsm3900dcx6.pdf pdf_icon

TSM3900DCX6

TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 VDS (V) RDS(on)(m) ID (A) 3. Gate 2 4. Drain 2 55 @ VGS = 4.5V 2.0 20 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.1. Size:299K  taiwansemi
 tsm3911dcx6.pdf pdf_icon

TSM3900DCX6

TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 VDS (V) RDS(on)(m) ID (A) 3. Gate 2 4. Drain 2 140 @ VGS = -4.5V -2.2 -20 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica

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History: MTN2572F3 | HLML6401 | DMN3009LFVW | ST3414A | PTA13N60 | FHP150N03C | AP85T03GH-HF

Keywords - TSM3900DCX6 MOSFET datasheet

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