TSM3N80CH Datasheet and Replacement
Type Designator: TSM3N80CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO-251
TSM3N80CH substitution
TSM3N80CH Datasheet (PDF)
tsm3n80ch tsm3n80ci tsm3n80cp tsm3n80cz.pdf

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 4.2 @ VGS =10V 1.5 General Description The TSM3N80 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re
tsm3n90ch tsm3n90ci tsm3n90cp tsm3n90cz.pdf

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re
Datasheet: TSM3462CX6 , TSM3481CX6 , TSM3548DCX6 , TSM35N03CP , TSM35N03PQ56 , TSM35N10CP , TSM3900DCX6 , TSM3911DCX6 , AON7410 , TSM3N80CI , TSM3N80CP , TSM3N80CZ , TSM3N90CH , TSM3N90CI , TSM3N90CP , TSM3N90CZ , TSM40N03PQ33 .
History: PMV164ENEA | AM2394NE | APT6029BLL | APT38N60BC6 | STF3N80K5 | CEU06N7 | IRFP9131
Keywords - TSM3N80CH MOSFET datasheet
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History: PMV164ENEA | AM2394NE | APT6029BLL | APT38N60BC6 | STF3N80K5 | CEU06N7 | IRFP9131



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