All MOSFET. TSM3N80CP Datasheet

 

TSM3N80CP Datasheet and Replacement


   Type Designator: TSM3N80CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-252
 

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TSM3N80CP Datasheet (PDF)

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TSM3N80CP

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 4.2 @ VGS =10V 1.5 General Description The TSM3N80 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

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TSM3N80CP

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

Datasheet: TSM3548DCX6 , TSM35N03CP , TSM35N03PQ56 , TSM35N10CP , TSM3900DCX6 , TSM3911DCX6 , TSM3N80CH , TSM3N80CI , IRFB3607 , TSM3N80CZ , TSM3N90CH , TSM3N90CI , TSM3N90CP , TSM3N90CZ , TSM40N03PQ33 , TSM40N03PQ56 , TSM414K34CS .

History: LS165 | P2610BT | DMN3035LWN | HMS21N65F | SI1012 | IPB34CN10N | FQD2N50TF

Keywords - TSM3N80CP MOSFET datasheet

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