All MOSFET. TSM3N90CH Datasheet

 

TSM3N90CH Datasheet and Replacement


   Type Designator: TSM3N90CH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
   Package: TO-251
 

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TSM3N90CH Datasheet (PDF)

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TSM3N90CH

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

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TSM3N90CH

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 4.2 @ VGS =10V 1.5 General Description The TSM3N80 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

Datasheet: TSM35N03PQ56 , TSM35N10CP , TSM3900DCX6 , TSM3911DCX6 , TSM3N80CH , TSM3N80CI , TSM3N80CP , TSM3N80CZ , RFP50N06 , TSM3N90CI , TSM3N90CP , TSM3N90CZ , TSM40N03PQ33 , TSM40N03PQ56 , TSM414K34CS , TSM4392CS , TSM4404CS .

History: HGB040N06SL | IRF5803D2PBF | IRF6729MPBF | SM3116NBU | STP10NK80Z | STP10NK60Z | PSMN5R0-80PS

Keywords - TSM3N90CH MOSFET datasheet

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