TSM40N03PQ33 Specs and Replacement

Type Designator: TSM40N03PQ33

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: PDFN33

TSM40N03PQ33 substitution

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TSM40N03PQ33 datasheet

 ..1. Size:102K  taiwansemi
 tsm40n03pq33.pdf pdf_icon

TSM40N03PQ33

TSM40N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 4.6 @ VGS =10V 19 3. Source 6. Drain 30 4. Gate 5. Drain 5.9 @ VGS =4.5V 16 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 12nC (Typ.) Low Crss typical ... See More ⇒

 4.1. Size:87K  taiwansemi
 tsm40n03pq56.pdf pdf_icon

TSM40N03PQ33

TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 4.5 @ VGS =10V 19 3. Source 6. Drain 30 4. Gate 5. Drain 5.8 @ VGS =4.5V 16 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 12nC (Typ.) Low Crss typical ... See More ⇒

Detailed specifications: TSM3N80CH, TSM3N80CI, TSM3N80CP, TSM3N80CZ, TSM3N90CH, TSM3N90CI, TSM3N90CP, TSM3N90CZ, IRFB3607, TSM40N03PQ56, TSM414K34CS, TSM4392CS, TSM4404CS, TSM4410CS, TSM4410DCS, TSM4415CS, TSM4416DCS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.