All MOSFET. TSM40N03PQ33 Datasheet

 

TSM40N03PQ33 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM40N03PQ33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: PDFN33

 TSM40N03PQ33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM40N03PQ33 Datasheet (PDF)

 ..1. Size:102K  taiwansemi
 tsm40n03pq33.pdf

TSM40N03PQ33 TSM40N03PQ33

TSM40N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 4.6 @ VGS =10V 19 3. Source 6. Drain 30 4. Gate 5. Drain 5.9 @ VGS =4.5V 16 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 12nC (Typ.) Low Crss typical

 4.1. Size:87K  taiwansemi
 tsm40n03pq56.pdf

TSM40N03PQ33 TSM40N03PQ33

TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 4.5 @ VGS =10V 19 3. Source 6. Drain 30 4. Gate 5. Drain 5.8 @ VGS =4.5V 16 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 12nC (Typ.) Low Crss typical

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFN32N60

 

 
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