TSM414K34CS MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM414K34CS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP-8
TSM414K34CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM414K34CS Datasheet (PDF)
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tsm414k34cs.pdf
tsm414k34cs.pdf
TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 Pin Definition: MOSFET PRODUCT SUMMARY 1. Anode 8. Cathode VDS (V) RDS(on)(m) ID (A) 2. Anode 7. Cathode 3. Source 6. Drain 55 @ VGS = 10V 4 30 4. Gate 5. Drain 65 @ VGS = 4.5V 2 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) IF (A) 30 0.51 3 Block Diagram Features Advance Trench Process Technology
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