TSM4392CS MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM4392CS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 343 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOP-8
TSM4392CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM4392CS Datasheet (PDF)
..1. Size:203K taiwansemi
tsm4392cs.pdf
tsm4392cs.pdf
Preliminary TSM4392 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 11.5 @ VGS = 10V 12.5 4. Gate 30 16.5 @ VGS = 4.5V 10 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
