TSM4416DCS MOSFET Datasheet: N-Ch, 30V, 11A. Full specification with pinout and replacement list

TSM4416DCS Specs and Replacement

Type Designator: TSM4416DCS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 159.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP-8

TSM4416DCS substitution

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TSM4416DCS datasheet

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TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 15 @ VGS = 10V 11 30 24 @ VGS = 4.5V 10 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ... See More ⇒

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Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, Drain Features Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat... See More ⇒