All MOSFET. TSM4431CS Datasheet

 

TSM4431CS Datasheet and Replacement


   Type Designator: TSM4431CS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.43 nS
   Cossⓘ - Output Capacitance: 172.82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
 

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TSM4431CS Datasheet (PDF)

 ..1. Size:489K  taiwansemi
 tsm4431cs.pdf pdf_icon

TSM4431CS

TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A

 8.1. Size:370K  taiwansemi
 tsm4433cs.pdf pdf_icon

TSM4431CS

TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 90 @ VGS = -4.5V -3.9 4. Gate -20 110 @ VGS = -2.5V -3.2 5, 6, 7, 8. Drain 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 8.2. Size:494K  taiwansemi
 tsm4435cs.pdf pdf_icon

TSM4431CS

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba

 8.3. Size:305K  taiwansemi
 tsm4433dcs.pdf pdf_icon

TSM4431CS

TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 90 @ VGS = -4.5V -3.9 4. Gate 2 5. Drain 2 -20 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Lo

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Datasheet: TSM4404CS , TSM4410CS , TSM4410DCS , TSM4415CS , TSM4416DCS , TSM4424CS , TSM4425CS , TSM4426CS , STF13NM60N , TSM4433CS , TSM4433DCS , TSM4435BCS , TSM4435CS , TSM4436CS , TSM4513DCS , TSM4539DCS , TSM4835CS .

History: AP9973GJ-HF | SFF440 | SIHF9530S

Keywords - TSM4431CS MOSFET datasheet

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