TSM4431CS - параметры транзистора MOSFET, его аналоги, datasheet

TSM4431CS Datasheet (PDF)

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TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A

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TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 90 @ VGS = -4.5V -3.9 4. Gate -20 110 @ VGS = -2.5V -3.2 5, 6, 7, 8. Drain 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

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tsm4435cs.pdf pdf_icon

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba

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TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 90 @ VGS = -4.5V -3.9 4. Gate 2 5. Drain 2 -20 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Lo