TSM4ND50CP Datasheet. Specs and Replacement

Type Designator: TSM4ND50CP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO-252

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TSM4ND50CP datasheet

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TSM4ND50CP

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res... See More ⇒

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 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4ND50CP

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s... See More ⇒

 9.2. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4ND50CP

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s... See More ⇒

 9.3. Size:477K  taiwansemi
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TSM4ND50CP

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a... See More ⇒

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Detailed specifications: TSM4N80CI, TSM4N80CZ, TSM4N90CI, TSM4N90CZ, TSM4NB60CH, TSM4NB60CI, TSM4NB60CP, TSM4NB60CZ, 8N65, TSM55N03CP, TSM5NB50CZ, TSM5ND50CH, TSM5ND50CP, TSM60N03CP, TSM60N06CP, TSM6866DCA, TSM6866SDCA

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