All MOSFET. TSM70N10CP Datasheet

 

TSM70N10CP Datasheet and Replacement


   Type Designator: TSM70N10CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-252
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TSM70N10CP Datasheet (PDF)

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TSM70N10CP

TSM70N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 13 @ VGS =10V 70 Features Block Diagram Advanced Trench Technology Low RDS(ON) 13m (Max.) Low gate charge typical @ 145nC (Typ.) Low Crss typical @ 120pF (Typ.) Ordering Information Part No. Packa

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History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z

Keywords - TSM70N10CP MOSFET datasheet

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