TSM70N10CP Specs and Replacement
Type Designator: TSM70N10CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-252
TSM70N10CP substitution
- MOSFET ⓘ Cross-Reference Search
TSM70N10CP datasheet
tsm70n10cp.pdf
TSM70N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 13 @ VGS =10V 70 Features Block Diagram Advanced Trench Technology Low RDS(ON) 13m (Max.) Low gate charge typical @ 145nC (Typ.) Low Crss typical @ 120pF (Typ.) Ordering Information Part No. Packa... See More ⇒
Detailed specifications: TSM6963SDCA, TSM6968DCA, TSM6968SDCA, TSM6981DCA, TSM6988DCX6, TSM6N50CH, TSM6N50CI, TSM6N50CP, IRF540N, TSM7401CS, TSM75N03CP, TSM75N75CZ, TSM7900DCQ, TSM7N60CI, TSM7N60CZ, TSM7N65CI, TSM7N65CZ
Keywords - TSM70N10CP MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPA60R520C6 | AOK29S50 | MTD5P06VT4G | MDD14N25CRH
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