TSM802CQ MOSFET PDF: N-Ch, 20V, 6A. Datasheet. Full specification with pinout and replacement list

TSM802CQ Specs and Replacement

   Type Designator: TSM802CQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TDFN3X3

TSM802CQ substitution

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TSM802CQ datasheet

..1. Size:254K taiwansemi
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TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 25 @ VGS = 4.5V 5 4. Gate 5, 6, 7, 8. Drain 20 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0... See More ⇒

9.1. Size:62K taiwansemi
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TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram Advanced Trench Technology Low RDS(ON) 8m (Max.) Low gate charge typical @ 91.5nC (Typ.) Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing ... See More ⇒

Detailed specifications: TSM75N75CZ , TSM7900DCQ , TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , TSM7N90CI , TSM7N90CZ , AO3400 , TSM80N08CZ , TSM85N10CZ , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI , TSM8N80CZ , TSM9409CS .