TSM80N08CZ Specs and Replacement

Type Designator: TSM80N08CZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 371 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220

TSM80N08CZ substitution

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TSM80N08CZ datasheet

 ..1. Size:62K  taiwansemi
 tsm80n08cz.pdf pdf_icon

TSM80N08CZ

TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram Advanced Trench Technology Low RDS(ON) 8m (Max.) Low gate charge typical @ 91.5nC (Typ.) Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing ... See More ⇒

 9.1. Size:254K  taiwansemi
 tsm802cq.pdf pdf_icon

TSM80N08CZ

TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 25 @ VGS = 4.5V 5 4. Gate 5, 6, 7, 8. Drain 20 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0... See More ⇒

Detailed specifications: TSM7900DCQ, TSM7N60CI, TSM7N60CZ, TSM7N65CI, TSM7N65CZ, TSM7N90CI, TSM7N90CZ, TSM802CQ, IRFB4227, TSM85N10CZ, TSM8N50CH, TSM8N50CP, TSM8N70CI, TSM8N80CI, TSM8N80CZ, TSM9409CS, TSM9426DCS

Keywords - TSM80N08CZ MOSFET specs

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