All MOSFET. TSM80N08CZ Datasheet

 

TSM80N08CZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM80N08CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 91.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220

 TSM80N08CZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM80N08CZ Datasheet (PDF)

 ..1. Size:62K  taiwansemi
 tsm80n08cz.pdf

TSM80N08CZ TSM80N08CZ

TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram Advanced Trench Technology Low RDS(ON) 8m (Max.) Low gate charge typical @ 91.5nC (Typ.) Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing

 9.1. Size:254K  taiwansemi
 tsm802cq.pdf

TSM80N08CZ TSM80N08CZ

TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 25 @ VGS = 4.5V 5 4. Gate 5, 6, 7, 8. Drain 20 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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