All MOSFET. TSM80N08CZ Datasheet

 

TSM80N08CZ Datasheet and Replacement


   Type Designator: TSM80N08CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 91.5 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220
 

 TSM80N08CZ substitution

   - MOSFET ⓘ Cross-Reference Search

 

TSM80N08CZ Datasheet (PDF)

 ..1. Size:62K  taiwansemi
 tsm80n08cz.pdf pdf_icon

TSM80N08CZ

TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram Advanced Trench Technology Low RDS(ON) 8m (Max.) Low gate charge typical @ 91.5nC (Typ.) Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing

 9.1. Size:254K  taiwansemi
 tsm802cq.pdf pdf_icon

TSM80N08CZ

TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 25 @ VGS = 4.5V 5 4. Gate 5, 6, 7, 8. Drain 20 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0

Datasheet: TSM7900DCQ , TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , TSM7N90CI , TSM7N90CZ , TSM802CQ , IRFB4110 , TSM85N10CZ , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI , TSM8N80CZ , TSM9409CS , TSM9426DCS .

Keywords - TSM80N08CZ MOSFET datasheet

 TSM80N08CZ cross reference
 TSM80N08CZ equivalent finder
 TSM80N08CZ lookup
 TSM80N08CZ substitution
 TSM80N08CZ replacement

 

 
Back to Top

 


 
.