TSM9409CS PDF and Equivalents Search

 

TSM9409CS Specs and Replacement

Type Designator: TSM9409CS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: SOP-8

TSM9409CS substitution

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TSM9409CS datasheet

 ..1. Size:349K  taiwansemi
 tsm9409cs.pdf pdf_icon

TSM9409CS

TSM9409 60V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 155 @ VGS = -10V -3.5 4. Gate -60 5, 6, 7, 8. Drain 200 @ VGS = 4.5V -3.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA ... See More ⇒

 9.1. Size:223K  taiwansemi
 tsm9434cs.pdf pdf_icon

TSM9409CS

TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m ) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch ... See More ⇒

 9.2. Size:379K  taiwansemi
 tsm9428dcs.pdf pdf_icon

TSM9409CS

TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P... See More ⇒

 9.3. Size:249K  taiwansemi
 tsm9426dcs.pdf pdf_icon

TSM9409CS

TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 14 @ VGS = 10V 9.4 4. Gate 2 5. Drain 2 16 @ VGS = 4.5V 8 20 22 @ VGS = 2.5V 6 30 @ VGS = 1.8V 4 Features Block Diagram Advance Trench Process Technology High Density Ce... See More ⇒

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Detailed specifications: TSM802CQ, TSM80N08CZ, TSM85N10CZ, TSM8N50CH, TSM8N50CP, TSM8N70CI, TSM8N80CI, TSM8N80CZ, 8205A, TSM9426DCS, TSM9428CS, TSM9428DCS, TSM9434CS, TSM9434DCS, TSM9435CS, TSM9926DCS, TSM9933DCS

Keywords - TSM9409CS MOSFET specs

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