TSM9409CS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TSM9409CS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 60 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm
Тип корпуса: SOP-8
TSM9409CS Datasheet (PDF)
tsm9409cs.pdf
TSM9409 60V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 155 @ VGS = -10V -3.5 4. Gate -60 5, 6, 7, 8. Drain 200 @ VGS = 4.5V -3.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA
tsm9434cs.pdf
TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch
tsm9428dcs.pdf
TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P
tsm9426dcs.pdf
TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 14 @ VGS = 10V 9.4 4. Gate 2 5. Drain 2 16 @ VGS = 4.5V 8 20 22 @ VGS = 2.5V 6 30 @ VGS = 1.8V 4 Features Block Diagram Advance Trench Process Technology High Density Ce
tsm9435cs.pdf
TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit
tsm9434dcs.pdf
TSM9434D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 40 @ VGS = -4.5V -6.4 -20 4. Gate 2 5. Drain 2 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Appli
tsm9428cs.pdf
TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 6.0 4. Gate 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch O
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F