All MOSFET. TSM9426DCS Datasheet

 

TSM9426DCS Datasheet and Replacement


   Type Designator: TSM9426DCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.65 nC
   tr ⓘ - Rise Time: 800.4 nS
   Cossⓘ - Output Capacitance: 183.88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8
 

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TSM9426DCS Datasheet (PDF)

 ..1. Size:249K  taiwansemi
 tsm9426dcs.pdf pdf_icon

TSM9426DCS

TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 14 @ VGS = 10V 9.4 4. Gate 2 5. Drain 2 16 @ VGS = 4.5V 8 20 22 @ VGS = 2.5V 6 30 @ VGS = 1.8V 4 Features Block Diagram Advance Trench Process Technology High Density Ce

 8.1. Size:379K  taiwansemi
 tsm9428dcs.pdf pdf_icon

TSM9426DCS

TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P

 8.2. Size:360K  taiwansemi
 tsm9428cs.pdf pdf_icon

TSM9426DCS

TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 6.0 4. Gate 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch O

 9.1. Size:223K  taiwansemi
 tsm9434cs.pdf pdf_icon

TSM9426DCS

TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch

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Datasheet: TSM80N08CZ , TSM85N10CZ , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI , TSM8N80CZ , TSM9409CS , IRFP250N , TSM9428CS , TSM9428DCS , TSM9434CS , TSM9434DCS , TSM9435CS , TSM9926DCS , TSM9933DCS , TSM9966DCX6 .

Keywords - TSM9426DCS MOSFET datasheet

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