Справочник MOSFET. TSM9426DCS

 

TSM9426DCS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TSM9426DCS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 800.4 ns
   Cossⓘ - Выходная емкость: 183.88 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: SOP-8
     - подбор MOSFET транзистора по параметрам

 

TSM9426DCS Datasheet (PDF)

 ..1. Size:249K  taiwansemi
tsm9426dcs.pdfpdf_icon

TSM9426DCS

TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 14 @ VGS = 10V 9.4 4. Gate 2 5. Drain 2 16 @ VGS = 4.5V 8 20 22 @ VGS = 2.5V 6 30 @ VGS = 1.8V 4 Features Block Diagram Advance Trench Process Technology High Density Ce

 8.1. Size:379K  taiwansemi
tsm9428dcs.pdfpdf_icon

TSM9426DCS

TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P

 8.2. Size:360K  taiwansemi
tsm9428cs.pdfpdf_icon

TSM9426DCS

TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 6.0 4. Gate 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch O

 9.1. Size:223K  taiwansemi
tsm9434cs.pdfpdf_icon

TSM9426DCS

TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP4800CGM-HF | STS65R580SS2TR | IRHM9250 | SWP8N65D | HM25P15D | IPA50R650CE | HUFA75307D3

 

 
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