TSM9N50CI Datasheet. Specs and Replacement

Type Designator: TSM9N50CI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: ITO-220

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TSM9N50CI datasheet

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TSM9N50CI

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista... See More ⇒

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TSM9N50CI

TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... See More ⇒

 9.2. Size:164K  taiwansemi
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TSM9N50CI

TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov... See More ⇒

 9.3. Size:419K  taiwansemi
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TSM9N50CI

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide... See More ⇒

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Detailed specifications: TSM9428CS, TSM9428DCS, TSM9434CS, TSM9434DCS, TSM9435CS, TSM9926DCS, TSM9933DCS, TSM9966DCX6, IRFP064N, TSM9N50CZ, TSM9N90CI, TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60, TT8J11

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