NDB508A PDF and Equivalents Search

 

NDB508A Specs and Replacement

Type Designator: NDB508A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO263

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NDB508A datasheet

 9.1. Size:358K  fairchild semi
 ndp5060l ndb5060l.pdf pdf_icon

NDB508A

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. This Critical DC electrical p... See More ⇒

 9.2. Size:468K  onsemi
 ndp5060l ndb5060l.pdf pdf_icon

NDB508A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: NDB4050, NDB4050L, NDB4060, NDB4060L, NDB408A, NDB410A, NDB5060, NDB5060L, IRFZ46N, NDB510A, NDB6020, NDB6020P, NDB6030, NDB6030L, NDB6030PL, NDB603AL, NDB6050

Keywords - NDB508A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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