NDB508A
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDB508A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TO263
NDB508A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDB508A
Datasheet (PDF)
9.1. Size:358K fairchild semi
ndp5060l ndb5060l.pdf 
October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. ThisCritical DC electrical p
9.2. Size:468K onsemi
ndp5060l ndb5060l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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