TT8J11 Specs and Replacement
Type Designator: TT8J11
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TSST8
TT8J11 substitution
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TT8J11 datasheet
tt8j11.pdf
TT8J11 Pch -12V -3.5A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSST8 (6) RDS(on) (Max.) 43mW (5) (1) ID -3.5A (2) (3) PD 1.25W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Built-in G-S Protection Diode. 4) Sma... See More ⇒
tt8j13.pdf
Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive(1.5V drive). Abbreviated symbol J13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping ... See More ⇒
Detailed specifications: TSM9N50CI, TSM9N50CZ, TSM9N90CI, TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60, K4145, TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2, TT8M1
Keywords - TT8J11 MOSFET specs
TT8J11 cross reference
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