TT8J21 PDF and Equivalents Search

 

TT8J21 Specs and Replacement

Type Designator: TT8J21

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: TSST8

TT8J21 substitution

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TT8J21 datasheet

 ..1. Size:522K  rohm
tt8j21.pdf pdf_icon

TT8J21

TT8J21 Pch -20V -2.5A Power MOSFET Datasheet lOutline (8) VDSS -20V (7) TSST8 (6) RDS(on) (Max.) 68mW (5) (1) ID -2.5A (2) (3) PD 1.25W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain (2) Tr1 Gate (6) Tr2 Drain 2) -1.5V Drive. (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Built-in G-S Protection Diode. 4) Sm... See More ⇒

 9.1. Size:139K  rohm
tt8j2.pdf pdf_icon

TT8J21

4V Drive Pch MOSFET TT8J2 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4) 3) Low voltage drive. (4V) Abbreviated symbol J02 Applications Each lead has same dimensions Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code T... See More ⇒

Detailed specifications: TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60, TT8J11, TT8J13, TT8J2, 12N60, TT8J3, TT8K1, TT8K11, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1

Keywords - TT8J21 MOSFET specs

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