TT8K1 PDF and Equivalents Search

 

TT8K1 Specs and Replacement

Type Designator: TT8K1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TSST8

TT8K1 substitution

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TT8K1 datasheet

 ..1. Size:183K  rohm
 tt8k1.pdf pdf_icon

TT8K1

1. V Drive Nch MOSFET TT8K1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. (1) (2) (3) (4) 2) High power package. 3) 1.5V drive. Abbreviated symbol K01 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) ... See More ⇒

 0.1. Size:509K  rohm
 tt8k11.pdf pdf_icon

TT8K1

Data Sheet 4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSST8 Features (8) (7) (6) (5) 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (1) (2) (3) (4) Abbreviated symbol K11 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Tapin... See More ⇒

Detailed specifications: TSM9NB50CI, TSM9NB50CZ, TSU45N60, TT8J11, TT8J13, TT8J2, TT8J21, TT8J3, IRF1010E, TT8K11, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR, TT8U2

Keywords - TT8K1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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