TT8K2 Specs and Replacement
Type Designator: TT8K2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TSST8
TT8K2 substitution
- MOSFET ⓘ Cross-Reference Search
TT8K2 datasheet
tt8k2.pdf
TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline (8) VDSS 30V (7) TSST8 (6) RDS(on) (Max.) 90mW (5) (1) ID 2.5A (2) (3) PD 1.25W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Packag... See More ⇒
Detailed specifications: TSU45N60, TT8J11, TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, AON6380, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR, TT8U2, BUK104-50S, BUK114-50L-S
Keywords - TT8K2 MOSFET specs
TT8K2 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SVSP65R110SHD4TR | STF6N60M2
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