BUK104-50S Specs and Replacement
Type Designator: BUK104-50S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ -
Output Capacitance: 275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-220-5
- MOSFET ⓘ Cross-Reference Search
BUK104-50S datasheet
..1. Size:152K philips
buk104-50s.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo... See More ⇒
5.1. Size:116K philips
buk104-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo... See More ⇒
9.1. Size:72K philips
buk108-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for... See More ⇒
9.2. Size:72K philips
buk101-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T... See More ⇒
9.3. Size:63K philips
buk107-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.4. Size:84K philips
buk102-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T... See More ⇒
9.5. Size:90K philips
buk107 50ds hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. ... See More ⇒
9.6. Size:68K philips
buk100-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD... See More ⇒
9.7. Size:93K philips
buk108-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive PD Total power... See More ⇒
9.8. Size:92K philips
buk109-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 29 A purpose switch for automotive PD Total power... See More ⇒
9.9. Size:86K philips
buk102-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total p... See More ⇒
9.10. Size:62K philips
buk107-50ds 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.11. Size:75K philips
buk109-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P... See More ⇒
9.12. Size:101K philips
buk108-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for... See More ⇒
9.13. Size:64K philips
buk107-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.14. Size:92K philips
buk107 50dl hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. ... See More ⇒
9.15. Size:87K philips
buk101-50gs.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 29 A automotive systems and other PD Total p... See More ⇒
9.16. Size:87K philips
buk109-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P... See More ⇒
9.17. Size:69K philips
buk102-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T... See More ⇒
9.18. Size:112K philips
buk106-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch fo... See More ⇒
9.19. Size:84K philips
buk101-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T... See More ⇒
9.20. Size:98K philips
buk100-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD... See More ⇒
9.21. Size:88K philips
buk100-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 15 A automotive systems and other PD Total p... See More ⇒
Detailed specifications: TT8K11, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR, TT8U2, TK10A60D, BUK114-50L-S, BUK127-50DL, BUK127-50GT, BUK128-50DL, BUK129-50DL, BUK138-50DL, BUK139-50DL, BUK1M200-50SGTD
Keywords - BUK104-50S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
