BUK104-50S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK104-50S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 275 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO-220-5
Аналог (замена) для BUK104-50S
BUK104-50S Datasheet (PDF)
buk104-50s.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo
buk104-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo
buk108-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for
buk101-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T
buk107-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk102-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T
buk107 50ds hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DSPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DSLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.
buk100-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD
buk108-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch for automotive PD Total power
buk109-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 29 Apurpose switch for automotive PD Total power
buk102-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 50 Aautomotive systems and other PD Total p
buk107-50ds 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk109-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P
buk108-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for
buk107-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk107 50dl hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DLPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DLLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.
buk101-50gs.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 29 Aautomotive systems and other PD Total p
buk109-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P
buk102-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T
buk106-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch fo
buk101-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T
buk100-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD
buk100-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 15 Aautomotive systems and other PD Total p
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918