All MOSFET. BUK138-50DL Datasheet

 

BUK138-50DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK138-50DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-428

 BUK138-50DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK138-50DL Datasheet (PDF)

 ..1. Size:42K  philips
 buk138-50dl.pdf

BUK138-50DL BUK138-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK138-50DL D-PAK version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD

 9.1. Size:34K  philips
 buk139-50dl.pdf

BUK138-50DL BUK138-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK139-50DL D-PAK version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD

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