All MOSFET. BUK138-50DL Datasheet

 

BUK138-50DL Datasheet and Replacement


   Type Designator: BUK138-50DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-428
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BUK138-50DL Datasheet (PDF)

 ..1. Size:42K  philips
 buk138-50dl.pdf pdf_icon

BUK138-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK138-50DL D-PAK version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD

 9.1. Size:34K  philips
 buk139-50dl.pdf pdf_icon

BUK138-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK139-50DL D-PAK version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK360 | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | PTW09N90 | STD4N62K3

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